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Transistor IRF3205 (IRF3205PBF)


Technical specifications
N-channel structure
Maximum voltage drain-source Usi, V 55
Maximum drain-source current at 25 C Isi max .. A 110
Maximum gate-source voltage Uzi max., V ± 20
Resistance of the channel in the open state Rсl incl. (Max) at Id, Rds (on) 0.008 ohm at 62a, 10v
Maximum power dissipation Ps max. W 200
Slope characteristics, S 44
Enclosure to220ab
The threshold voltage at the gate 2 ... 4
Weight, g 2.5

Cost: ~ 12

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